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УФ-датчики

Наименование Код заказа Стоимость Кол-во
УФ-датчики Far UV Sensor GFUV-T10GD-L
  • Aluminium Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Solar Blindness

    • Applications

    • Far UV Monitoring
    • Excimer Lamp Monitoring

    Outline Diagrams and Dimensions 


    3.jpg
    Absolute Maximum Ratings

    Parameter

    Symbol

    Min.

    Max.

    Unit

    Remark

    Storage Temperature

    Tst

    -40

    90

    ℃

     

    Operating Temperature

    Top

    -30

    85

    ℃

     

    Reverse Voltage

    Vr, max.

     

    2

    V

     

    Forward Current

    If,max.

     

    1

    ㎃

     

    Optical Source Power Range

    Popt

    0.1m

    100m

    W/㎠

    Excimer Lamp

    Soldering Temperature

    Tsol

     

    260

    ℃

    within 10 sec.

    Notice: apply to us in the case that Optical Source Power is over 100,000 W/㎠

    Characteristics (at 25℃)

    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Test Conditions

    Dark Current

    Id

     

     

    100

    pA

    Vr = 1 V

    Photo Current

    Iph

    45

    50

    55

    ㎁

    222nm peak
    FUV Lamp,1㎽/㎠

    2,12

    2,35

    2,58

    ㎁

    172nm peak
    VUV Lamp,1㎽/㎠

    Spectral Detection range

    λ

     

     

    245

    nm

     

    Active area

     

     

    1,536

     

    ㎟

     



    Relative Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

    5.jpg
    Caution

    ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GFUV-T10GD-L
    по запросу
    УФ-датчики UHP-200-36
    UHP-200-36
    по запросу
    УФ-датчики UHP-350-15
    UHP-350-15
    по запросу
    УФ-датчики UHP-350-4.2
    UHP-350-4.2
    по запросу
    УФ-датчики UHP-350-5
    UHP-350-5
    по запросу
    УФ-датчики UV / Visible Sensor GVBL-S12SD
  • SMD3528 with Si-encapsulant
  • Indium Gallium Nitride Based Material
  • PN-type Photodiode
  • Photovoltaic Mode Operation
  • High Responsivity & Low Dark Current 

    • Applications
    • UV LED Monitoring (385, 405nm, etc.)
    • Blue LED Monitoring
    • UVA Lamp Monitoring
    • UV Curing

    Outline Diagrams and Dimensions 


        3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph   90   ㎁ UVA (352㎚), 1㎽/㎠
      790     405nm LED, 1㎽/㎠
    Responsivity R   0,68   A/W  λ = 405 ㎚, Vr = 0 V
    Spectral Detection Range λ 345   450 ㎚ 10% of R

    Responsivity(A/W)

    4.jpg
    Output Voltage along UV Power
    5.jpg


          
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GVBL-S12SD
    по запросу
    УФ-датчики UV / Visible Sensor GVBL-T12GD
  • TO-46 with quartz glass
  • Indium Gallium Nitride Based Material
  • PN-type Photodiode
  • Photovoltaic Mode Operation
  • High Responsivity & Low Dark Current 

    • Applications
    • UV LED Monitoring (365, 385nm, etc.)
    • Blue LED Monitoring
    • UVA Lamp Monitoring
    • UV Curing

    Outline Diagrams and Dimensions 


        3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph   550   ㎁ LED (385㎚), 1㎽/㎠
    Responsivity R   0,13   A/W  λ = 385 ㎚, Vr = 0 V
    Spectral Detection Range λ 330   445 ㎚ 10% of R

    Responsivity(A/W)

    4.jpg
    Output Voltage along UV Power
    5.jpg


          
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GVBL-T12GD
    по запросу
    УФ-датчики UV / Visible Sensor GVGR-S11SD
  • SMD3528 with Si-encapsulant
  • Indium Gallium Nitride Based Material
  • PN-type Photodiode
  • Photovoltaic Mode Operation
  • High Responsivity & Low Dark Current 

    • Applications
    • UV LED Monitoring (385, 405nm, etc.)
    • Blue LED Monitoring
    • UVA Lamp Monitoring
    • UV Curing

    Outline Diagrams and Dimensions 


        3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph   44   ㎁ LED (405㎚), 1㎽/㎠
    Responsivity R   0,07   A/W  λ = 405 ㎚, Vr = 0 V
    Spectral Detection Range λ 295   490 ㎚ 10% of R


    Responsivity(A/W)

    4.jpg
    Output Voltage along UV Power
    5.jpg


          
    Caution

      ESD can damage the device hence please avoid ESD. 
    " />
    GVGR-S11SD
    по запросу
    УФ-датчики UV / Visible Sensor GVGR-T10GD
  • TO-46 with quartz glass
  • Indium Gallium Nitride Based Material
  • PN-type Photodiode
  • Photovoltaic Mode Operation
  • High Responsivity & Low Dark Current 

    • Applications
    • UV LED Monitoring (385, 405nm, etc.)
    • Blue LED Monitoring
    • UVA Lamp Monitoring
    • UV Curing

    Outline Diagrams and Dimensions 


        3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph   11   ㎁ LED (405㎚), 1㎽/㎠
    Temperature Coefficient Tc   -0,08   %/℃  
    Responsivity R   0,026   A/W  λ = 405 ㎚, Vr = 0 V
    Spectral Detection Range λ 300   510 ㎚ 10% of R



    Responsivity(A/W)

    4.jpg
    Output Voltage along UV Power
    5.jpg


          
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GVGR-T10GD
    по запросу
    УФ-датчики UV Sensor Module GUVB-T21GH
  • Single Supply Voltage Operation
  • Amplified Voltage Output
  • High Sensitivity and Good Solar Blindness
  • Small and Compact Size

    • Applications
    • UV-B Lamp Monitoring
    • UV Index Monitoring

    Outline Diagrams and Dimensions 


      3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Supply Voltage Vcc   5,5 V  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Remark
    Supply Voltage Vcc 1,8   5,5 V DC
      Supply Current IQ   50   ㎂  
    Responsivity Rp   1,3   ㎷/㎻ at 300 ㎚
    Spectral Detection Range λ 220   320 ㎚ 10% of Rp
    Output Voltage Vout   0,93   V 1 ㎽/㎠
      8   ㎷ 1 UVI
    Detection Power Range P 0   5,38 ㎽/㎠ Vcc=5V
    Rising Time Tr   3   ㎳  

    Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

         5.jpg 6.jpg
    Caution

    ESD can damage the device hence please avoid ESD.
    " />
    GUVB-T21GH
    по запросу
    УФ-датчики UV Sensor Module GUVC-T21GH
  • Single Supply Voltage Operation
  • Amplified Voltage Output
  • High Sensitivity and Good Solar Blindness
  • Small and Compact Size

    • Applications
    • Pure UV-C Monitoring
    • Sterilization Lamp Monitoring

    Outline Diagrams and Dimensions 


      3.jpg 
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Supply Voltage Vcc   5,5 V  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Remark
    Supply Voltage Vcc 1,8   5,5 V DC
      Supply Current IQ   50   ㎂  
    Responsivity Rp   0,6   ㎷/㎻ at 254 ㎚
    Spectral Detection Range λ 220   280 ㎚ 10% of Rp
    Output Voltage Vout 0,64 0,71 0,78 V 1 ㎽/㎠
    Offset Voltage Voff   0,01   V  
    Detection Power Range P 0   7,0 ㎽/㎠ Vcc=5V
    Rising Time Tr   3   ㎳  

    Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

    5.jpg
          
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GUVC-T21GH
    по запросу
    УФ-датчики UV Sensor Module GUVV-T21GH
  • Single Supply Voltage Operation
  • Amplified Voltage Output
  • High Sensitivity and Good Solar Blindness
  • Small and Compact Size

    • Applications
    • UV-A Lamp Monitoring

    Outline Diagrams and Dimensions 


        3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Supply Voltage Vcc   5,5 V  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Remark
    Supply Voltage Vcc 1,8   5,5 V DC
      Supply Current IQ   50   ㎂  
    Responsivity Rp   1   ㎷/㎻ at 360 ㎚
    Spectral Detection Range λ 230   395 ㎚ 10% of Rp
    Output Voltage Vout   1,55   V 1 ㎽/㎠
    Offset Voltage Voff   0,01   V  
    Detection Power Range P 0   3,2 ㎽/㎠ Vcc=5V
    Rising Time Tr   3   ㎳  

    Responsivity(A/W)

    4.jpg
    Output Voltage along UV Power
    5.jpg


          
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GUVV-T21GH
    по запросу
    УФ-датчики UV-A Sensor GUVA-T11GD-L
  • Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Visible Blindness
  • High Responsivity & Low Dark Current 

    • Applications

    • Full UV Band Monitoring
    • UV-A Lamp Monitoring

    Outline Diagrams and Dimensions 


    3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.01µ 100m W/㎠ UVA Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     20 ㎁  Vr = 0.1 V 
    Photo Current Iph 2,8 3,1 3,4 ㎂ UVA Lamp, 1㎽/㎠
    Temperature Coefficient Itc   0,05   ％/℃ UVA Lamp
    Responsivity R   0,18   A/W  λ = 350 ㎚, Vr = 0 V
    Spectral Detection Range λ 220   370 ㎚ 10% of R
    Active area     1,536   ㎟  

    Relative Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

      6.jpg
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GUVA-T11GD-L
    по запросу
    УФ-датчики UV-A Sensor GUVA-T13GD
  • Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Visible Blindness
  • High Responsivity & Low Dark Current 

    • Applications

    • Full UV Band Monitoring
    • UV-A Lamp Monitoring
    • Sterilization Lamp Monitoring

    Outline Diagrams and Dimensions 


    3.jpg
    Absolute Maximum Ratings

    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.1µ 100m W/㎠ UVA Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph 145 161 177 ㎁ UVA Lamp, 1㎽/㎠
      93   ㎁ UVC Lamp, 1㎽/㎠
    Temperature Coefficient Itc   0,05   ％/℃ UVA Lamp
    Responsivity R   0,18   A/W  λ = 350 ㎚, Vr = 0 V
    Spectral Detection Range λ 220   370 ㎚ 10% of R
    Active area     0,076   ㎟  

    Relative Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

     5.jpg 6.jpg
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GUVA-T13GD
    по запросу
    УФ-датчики UV-A Sensor GUVA-T31GD
  • Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Visible Blindness
  • High Responsivity & Low Dark Current 

    • Applications

    • Full UV Band Monitoring
    • UV-A Lamp Monitoring
    • Sterilization Lamp Monitoring

    Outline Diagrams and Dimensions 


    3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   5 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.1µ 100m W/㎠ UVA Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     10 ㎀  Vr = 0.1 V 
    Photo Current Iph 145 161 177 ㎁ UVA Lamp, 1㎽/㎠
      93   ㎁ UVC Lamp, 1㎽/㎠
    Temperature Coefficient Itc   0,05   ％/℃ UVA Lamp
    Responsivity R   0,18   A/W  λ = 350 ㎚, Vr = 0 V
    Spectral Detection Range λ 220   370 ㎚ 10% of R
    Active area     0,076   ㎟  

    Relative Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

     5.jpg 6.jpg
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GUVA-T31GD
    по запросу
    УФ-датчики UV-A Sensor GUVV-T10GD
  • Indium Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • High Responsivity & Low Dark Current 

    • Applications
    • Full UV Band Monitoring
    • UV-A Lamp Monitoring
    • Sterilization Lamp Monitoring

    Outline Diagrams and Dimensions 


      3.jpg 
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   2 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.1µ 100m W/㎠ UVA Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph 147 163 179 ㎁ UVA Lamp, 1㎽/㎠
    Temperature Coefficient Itc   0,1   ％/℃ UVA Lamp
    Responsivity R   0,12   A/W  λ = 350 ㎚, Vr = 0 V
    Spectral Detection Range λ 230   395 ㎚ 10% of R
    Active area     0,076   ㎟  

    Responsivity(A/W)

    4.jpg
    Output Voltage along UV Power
    5.jpg


          
    Caution

      ESD can damage the device hence please avoid ESD. Insulate the cap of TO-CAN or it can cause malfunction of the device.
    " />
    GUVV-T10GD
    по запросу
    УФ-датчики UV-A Sensor Module GUVA-T21GH
  • Single Supply Voltage Operation
  • Amplified Voltage Output
  • High Sensitivity and Good Solar Blindness
  • Small and Compact Size

    • Applications
    • UV-A Lamp Monitoring

    Outline Diagrams and Dimensions 


     3.jpg
    Absolute Maximum Ratings

    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Supply Voltage Vcc   5,5 V  
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Remark
    Supply Voltage Vcc 1,8   5,5 V DC
      Supply Current IQ   50   ㎂  
    Responsivity Rp   1,8   ㎷/㎻ at 350 ㎚
    Spectral Detection Range λ 220   370 ㎚ 10% of Rp
    Output Voltage Vout   1,88   V 1 ㎽/㎠
    Offset Voltage Voff   0,01   V  
    Detection Power Range P 0   2,7 ㎽/㎠ Vcc=5V
    Rising Time Tr   3   ㎳  

    Relative Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

      5.jpg
    Caution

    ESD can damage the device hence please avoid ESD.
    " />
    GUVA-T21GH
    по запросу
    УФ-датчики UV-B Sensor GUVB-S11SD
  • Aluminium Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Visible Blindness
  • High Responsivity & Low Dark Current 

    • Applications
    • UV Index Monitoring

    Outline Diagrams and Dimensions 


     3.jpg
    Absolute Maximum Ratings

    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   3 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.1µ 100m W/㎠ UVB Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph 62 69 75 ㎁ UVB Lamp, 1㎽/㎠
      1,4   ㎁ 1 UVI
    Temperature Coefficient Itc   0,1   ％/℃ UVB Lamp
    Responsivity R   0,11   A/W  λ = 300 ㎚, Vr = 0 V
    Spectral Detection Range λ 240   320 ㎚ 10% of R
    Active area     0,076   ㎟  

    Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

      5.jpg 6.jpg
    Caution

    ESD can damage the device hence please avoid ESD.
    " />
    GUVB-S11SD
    по запросу
    УФ-датчики UV-B Sensor GUVB-S12SD
  • Aluminium Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Visible Blindness
  • High Responsivity & Low Dark Current 

    • Applications
    • UV Index Monitoring

    Outline Diagrams and Dimensions 


     3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   3 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.1µ 100m W/㎠ UVB Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100㎽/㎠
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph 62 69 75 ㎁ UVB Lamp, 1㎽/㎠
      1,4   ㎁ 1 UVI
    Temperature Coefficient Itc   0,1   ％/℃ UVB Lamp
    Responsivity R   0,11   A/W  λ = 300 ㎚, Vr = 0 V
    Spectral Detection Range λ 240   320 ㎚ 10% of R
    Active area     0,076   ㎟  

    Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

       5.jpg 6.jpg
    Caution

    ESD can damage the device hence please avoid ESD.
    " />
    GUVB-S12SD
    по запросу
    УФ-датчики UV-B Sensor GUVB-S31GD
  • Aluminium Gallium Nitride Based Material
  • Schottky-type Photodiode
  • Photovoltaic Mode Operation
  • Good Visible Blindness
  • High Responsivity & Low Dark Current 

    • Applications
    • UV-B Lamp Monitoring
    • UV Index Monitoring

    Outline Diagrams and Dimensions 


     3.jpg
    Absolute Maximum Ratings
    Parameter Symbol Min. Max. Unit Remark
    Storage Temperature Tst -40 90 ℃  
    Operating Temperature Top -30 85 ℃  
    Reverse Voltage Vr, max.   3 V  
     Forward Current If,max.   1 ㎃  
    Optical Source Power Range Popt 0.1µ 100m W/㎠ UVC Lamp
    Soldering Temperature Tsol   260 ℃ within 10 sec.
    ※Notice: apply to us in the case that Optical Source Power is over 100,000㎼/㎠.
    Characteristics (at 25℃)
    Parameter Symbol Min. Typ. Max. Unit Test Conditions
      Dark Current Id     1 ㎁  Vr = 0.1 V 
    Photo Current Iph 108 120 132 ㎁ UVB Lamp, 1㎽/㎠
        1,8     1 UVI
    Temperature Coefficient Itc   0,1   ％/℃ UVB Lamp
    Responsivity R   0,15   A/W  λ = 300 ㎚, Vr = 0 V
    Spectral Detection Range λ 220   320 ㎚ 10% of R
    Active area     0,076   ㎟  

    Responsivity(A/W)

    4.jpg
    Photocurrent along UV Power

        5.jpg
    Caution

    ESD can damage the device hence please avoid ESD.
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    GUVB-S31GD
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