Средства разработки интегральных схем (ИС) управления питанием BOOSTXL-DRV8301

Оценочная плата , DRV8301 управление 3-фазным бесщеточным DC двигателем, NexFET МОП-транзисторы

The BOOSTXL-DRV8301 is a motor drive BoosterPack featuring DRV8301 and NexFET MOSFETs. It is a 10A, three phase brushless DC drive stage based on the DRV8301 predriver and CSD18533Q5A NextFET power MOSFET. The DRV8301 is a gate driver IC for three phase motor drive applications. It provides three half bridge drivers, each capable of driving two N type MOSFETs, one for the high side and one for the low side. The NexFET power MOSFET has been designed to minimize losses in power conversion applications. The motor drive BoosterPack module has three low side current sense amps (two internal to DRV8301, one external). The module also has a 1.5A step down buck converter, is fully protected with short circuit, thermal, and shoot through protection and is easily configured via a SPI interface. This BoosterPack is ideal for those wishing to learn about sensorless brushless control techniques and drive stage design. This was designed to work with any LaunchPad XL.

• 6V to 24V supply input
• Supports up to 14A peak, 10A continuous current output
• Supports voltage and current feedback for InstaSPIN-FOC sensorless control solution
• Complete brushless DC drive stage in ultra small form factor (2.2inch x 2.3inch)
• Three low side current sense amps, six power FETs and 1.5A step down buck converter
• Drive stage is fully protected including short circuit, thermal, shoot through and undervoltage
• Low side current shunt sense on each phase
• Individual phase and DC bus voltage sense
• Fully protected drive stage including short circuit, thermal, shoot through and undervoltage
• Integrated 1.5A step down buck converter

Области применения

Привод Двигателя и Управление, Потребительская Электроника This device has limited built in ESD protection. The leads should be shorted together or device placed in conductive foam during storage or handling to prevent electrostatic damage to MOS gates.