Оперативная память DS1250Y-70IND+

NVRAM , SRAM, 4 Мбит, 512К x 8бит, 70 нс, EDIP

The DS1250Y-70IND+ is a 4096k non-volatile SRAM in 32 pin EDIP package. This fully static SRAM is organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. Whenever this condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. This device can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide standard. It is normally paired with a DS9034PC PowerCap to form a complete non-volatile SRAM module and there is and no additional support circuitry required for microprocessor interfacing.

• Supply voltage range is 4.5V to 5.5V
• Operating temperature range from -40°C to 85°C
• 10 years minimum data retention in the absence of external power
• Replaces 512K x 8 volatile static RAM, EEPROM or flash memory
• Full ±10% VCC operating range (DS1250Y)
• Unlimited write cycles
• Read and write access time of 70ns
• Write protection voltage is 4.25V to 4.5V
• Data is automatically protected during power loss
• Built-in switch disconnects the lithium source until the user first applies VCC

Области применения

Встроенные Конструкции и Разработка