Оперативная память DS1230Y-100+.

NVRAM , SRAM, 256 Кбит, 32К x 8бит, Параллельный, 100 нс, DIP

The DS1230Y-100+ is a 256k Non-volatile SRAM is 262,144-bit, fully static, non-volatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

• 10-year Minimum data retention in absence of external power
• Data is automatically protected during power loss
• Replaces 32k x 8 volatile static RAM, EEPROM or flash memory
• Unlimited write cycles
• Low-power CMOS
• Full ±10% VCC operating range

Области применения

Промышленное