Оперативная память DS1230AB-120+

NVRAM , SRAM, 256 Кбит, 32К x 8бит, 120 нс, EDIP

The DS1230AB-120+ is a 256KB non-volatile SRAM in 28 pin EDIP package. It is a 262,144 bit, fully static, non-volatile SRAM organized as 32,768 words by 8 bits. The NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. This device can be used in place of existing 32K x 8 static RAMs directly conforming to the popular bytewide 28 pin DIP package. The DIP device matches the pin-out of 28256 EEPROMs allowing direct substitution while enhancing performance. This device is low profile module package are specifically designed for surface mount applications. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

• Supply voltage range from 4.75V to 5.25V
• Operating temperature range from 0°C to 70°C
• Replaces 32K x 8 volatile static RAM, EEPROM or flash memory
• Unlimited write cycles
• Low power CMOS
• Read and write access time is 120ns
• Lithium energy source is disconnected to retain freshness until power is applied for the first time

Области применения

Встроенные Конструкции и Разработка