Оперативная память DS1220AB-200+

NVRAM , SRAM, 16 Кбит, 2К x 8бит, 200 нс, EDIP

The DS1220AB-200+ is a 16K non-volatile SRAM in 24 pin EDIP package. This 16,384bit fully static non-volatile SRAM is organized as 2048 words by 8 bits. It has self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. During such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to popular bytewide 24 pin DIP package. The device also matches the pin-out of 2716 EPROM and 2816 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

• Supply voltage range from 4.75V to 5.25V
• Operating temperature range from 0°C to 70°C
• 10 years minimum data retention in absence of external power
• Data is automatically protected during power loss
• Low power CMOS technology
• Read and write access time of 200ns
• Write protection voltage of 4.62V
• 5pF input
• output capacitance

Области применения

Встроенные Конструкции и Разработка