Оперативная память CY7C199D-10VXI

ИС , SRAM, 256Кбит, 32К x 8бит, 10нс время доступа, 4.5В до 5.5В питание, SOJ-28

The CY7C199D-10VXI is a 256kB high performance CMOS Static Random Access Memory (SRAM) organized as 32768 words by 8-bit. Easy memory expansion is provided by an active LOW chip enable, an active LOW output enable and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or during a write operation. Write to the device by taking chip enable and write enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. Read from the device by taking chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The CY7C199D device is suitable for interfacing with processors that have TTL I/P levels.

• Pin and function compatible with CY7C199C
• High speed - 10ns
• Low active power
• Low CMOS standby power
• 2V Data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE

Области применения

Компьютеры и Периферия, Промышленное, Переносные Устройства