Оперативная память CY7C1019D-10VXI

SRAM , 1 Мбит, 128К x 8бит, 4.5В до 5.5В, SOJ, 32 вывод(-ов), 10 нс

The CY7C1019D-10VXI is a 1MB high-performance CMOS Static Random Access Memory (SRAM) organized as 131072 words by 8-bit. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enables (OE) and tri-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Write to the device by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins. Read from the device by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins. The CY7C1019D device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels.

• Pin and function-compatible with CY7C1019B
• High speed - 10ns
• Low active speed
• Low CMOS standby power
• 2V Data retention
• Automatic power-down when deselected
• CMOS for optimum speed
• power
• Center power
• ground pinout

• Easy memory expansion with CE and OE
• Functionally equivalent to CY7C1019B

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Компьютеры и Периферия, Промышленное, Переносные Устройства