Оперативная память CY62158ELL-45ZSXI

ИС , SRAM, 8Мбит, 1М x 8бит, 45нс время доступа, 4.5В до 5.5В питание, TSOP-II-44

The CY62158ELL-45ZSXI is a 8MB high performance CMOS Static Random Access Memory (SRAM) organized as 1024K words by 8-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected. To write to the device, take chip enables and write enable input LOW. Data on the eight I/O pins is then written into the location specified on the address pins. To read from the device, take chip enables and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or a write operation is in progres

• Very high speed - 45ns
• Ultralow standby power
• Ultralow active power
• Easy memory expansion with CE and OE
• Automatic power down when deselected
• CMOS for optimum speed
• power

Области применения

Компьютеры и Периферия, Промышленное, Переносные Устройства