Оперативная память CY62157EV30LL-45ZXI

SRAM , 8 Мбит, 512К x 16бит, 2.2В до 3.6В, TSOP-I, 48 вывод(-ов), 45 нс

The CY62157EV30LL-45ZXI is a 8Mb high performance CMOS static RAM organized as 512K words by 16-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected. The input or output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, byte high enable and byte low enable are disabled or a write operation is active. To write to the device, take chip enable and write enable inputs LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.

• Pin compatible with CY62157DV30
• Ultra low standby power
• Ultra low active power
• Automatic power down when deselected
• CMOS for optimum speed
• power

Области применения

Компьютеры и Периферия, Потребительская Электроника