Оперативная память CY62148ELL-55SXI

SRAM , 4 Мбит, 512К x 8бит, 4.5В до 5.5В, SOIC, 32 вывод(-ов), 45 нс

The CY62148ELL-55SXI is a 4MB high performance CMOS Static Random Access Memory (SRAM) organized as 512K words by 8-bit. This device features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled or during an active write operation. To write to the device, take chip enable and write enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins.

• Very high speed - 55ns
• Pin compatible with CY62148B
• Ultralow standby power
• Ultralow active power
• Easy memory expansion with CE and OE
• Automatic power down when deselected
• CMOS for optimum speed
• power

Области применения

Компьютеры и Периферия, Промышленное, Переносные Устройства