Оперативная память CY62146EV30LL-45ZSXI

SRAM , 4 Мбит, 256К x 16бит, 2.2В до 3.6В, TSOP, 44 вывод(-ов), 45 нс

The CY62146EV30LL-45ZSXI is a 4MB high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Lifeä (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enable and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.

• Very high speed - 45ns
• Pin compatible with CY62146DV30
• Ultralow standby power
• Ultralow active power
• Easy memory expansion with CE and OE
• Automatic power down when deselected
• CMOS for optimum speed
• power

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Компьютеры и Периферия, Промышленное, Переносные Устройства