MOSFET силовые транзисторы STP12NM50

Силовой МОП-транзистор , N Канал, 550 В, 12 А, 0.35 Ом, TO-220, Through Hole

The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

• High dv
• dt and avalanche capabilities
• Low input capacitance and gate charge
• 100% Avalanche tested
• Low gate input resistance
• Tight process control and high manufacturing yields

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