MOSFET силовые транзисторы STF11NM60ND

Силовой МОП-транзистор , N Канал, 600 В, 10 А, 0.37 Ом, TO-220FP, Through Hole

The STF11NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

• The worldwide best RDS (ON) area amongst the fast recovery diode device
• 100% Avalanche tested
• Low gate input resistance
• Extremely high dV
• dt and avalanche capabilities

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Промышленное, Управление Питанием