MOSFET силовые транзисторы NDP6060L

Силовой МОП-транзистор , N Канал, 60 В, 48 А, 0.025 Ом, TO-220, Through Hole

The NDP6060L is a logic level N-channel enhancement-mode power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• Low drive requirements allowing operation directly from logic drivers
• Critical DC electrical parameters specified at elevated temperature
• High density cell design for extremely low RDS (ON)

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