MOSFET силовые транзисторы MTP2P50EG

Силовой МОП-транзистор , P Канал, 500 В, 2 А, 6 Ом, TO-220AB, Through Hole

The MTP2P50EG is a P-channel high voltage Power MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. It is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Robust high voltage termination
• Avalanche energy specified
• Source-to-drain diode recovery time comparable to a discrete
• Fast recovery diode
• Diode is characterized for use in bridge circuits
• IDSS and VDS (on) specified at elevated temperature

Области применения

Управление Питанием, Привод Двигателя и Управление, Промышленное