MOSFET силовые транзисторы IRLR3105PBF

Силовой МОП-транзистор , N Канал, 55 В, 25 А, 0.037 Ом, TO-252 (DPAK), Surface Mount

The IRLR3105PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The package is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.

• Logic level gate drive
• Advanced process technology
• Repetitive avalanche allowed up to Tjmax
• Dynamic dV
• dt rating
• Fully avalanche rating

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Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate