MOSFET силовые транзисторы IRLR2908PBF

Силовой МОП-транзистор , N Канал, 80 В, 39 А, 0.028 Ом, TO-252 (DPAK), Surface Mount

The IRLR2908PBF is a 80V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.

• Advanced process technology
• Ultra low on-resistance
• Dynamic dV
• dt rating
• Repetitive avalanche allowed up to Tjmax
• 175°C Operating temperature

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