MOSFET силовые транзисторы IRLR2705PBF

Силовой МОП-транзистор , N Канал, 55 В, 28 А, 0.04 Ом, TO-252 (DPAK), Surface Mount

The IRLR2705PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount application.

• Logic level gate drive
• Advanced process technology
• Fully avalanche rating
• Dynamic dV
• dt rating

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Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate