MOSFET силовые транзисторы IRLIB4343PBF

Силовой МОП-транзистор , N Канал, 55 В, 19 А, 0.042 Ом, TO-220FP, Through Hole

The IRLIB4343PBF is a HEXFET® N-channel MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device.

• Advanced process technology
• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Repetitive avalanche capability for robustness and reliability

Области применения

Аудио, Управление Питанием