MOSFET силовые транзисторы IRL3803PBF

Силовой МОП-транзистор , N Канал, 30 В, 120 А, 0.006 Ом, TO-220AB, Through Hole

The IRL3803PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

• Single N-channel HEXFET® power MOSFET
• Logic level gate drive
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv
• dt rating
• 175°C operating temperature
• Fast switching and fully avalanche rated
• Planar cell structure for wide SOA
• Product qualification according to JEDEC standard

• High-current carrying capability package

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Коммерческое, Промышленное, Управление Питанием