MOSFET силовые транзисторы IRL3705NPBF

Силовой МОП-транзистор , N Канал, 55 В, 77 А, 0.01 Ом, TO-220AB, Through Hole

The IRL3705NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

• Single N-channel HEXFET® power MOSFET
• Advanced process technology
• Logic level gate drive
• Dynamic dv
• dt rating
• Fast switching
• Fully avalanche rated
• Planar cell structure for wide SOA
• Product qualification according to JEDEC standard
• High-current carrying capability package (up to 195A, die-size dependent)

• Capable of being wave-soldered

Области применения

Коммерческое, Промышленное, Управление Питанием