MOSFET силовые транзисторы IRL2910SPBF

Силовой МОП-транзистор , N Канал, 100 В, 55 А, 0.026 Ом, TO-263 (D2PAK), Surface Mount

The IRL2910SPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

• Logic level gate drive
• Advanced process technology
• Dynamic dV
• dt rating
• Fully avalanche rating

Области применения

Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate