MOSFET силовые транзисторы IRFI4019H-117P

Силовой МОП-транзистор , N Канал, 150 В, 8.7 А, 0.08 Ом, TO-220FP, Through Hole

The IRFI4019H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 200W per channel into 8R load in half-bridge configuration amplifier.

• Reduces the part count by half
• Facilitates better PCB layout
• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low Qrr for better THD and lower EMI

Области применения

Аудио, Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate