MOSFET силовые транзисторы IRFB4228PBF.

Силовой МОП-транзистор , N Канал, 150 В, 33 А, 0.015 Ом, TO-220AB, Through Hole

The IRFB4228PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. It is optimized for PDP sustain, energy recovery and pass switch applications.

• Advanced process technology
• Low EPULSE rating to reduce power dissipation
• Low Qg for fast response
• High repetitive peak current capability for reliable operation
• Short fall and rise times for fast switching
• Repetitive avalanche capability for robustness and reliability

Области применения

Потребительская Электроника, Управление Питанием