MOSFET силовые транзисторы IRFB4212PBF

Силовой МОП-транзистор , N Канал, 100 В, 18 А, 0.0725 Ом, TO-220AB, Through Hole

The IRFB4212PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 150W per channel into 4R load in half-bridge topology. It is suitable for full-bridge and push-pull application.

• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low QRR for better THD and lower EMI

Области применения

Управление Питанием, Аудио, Потребительская Электроника