MOSFET силовые транзисторы IRF8252PBF

Силовой МОП-транзистор , N Канал, 25 В, 25 А, 0.002 Ом, SOIC, Surface Mount

The IRF8252PBF is a HEXFET® single N-channel Power MOSFET housed in an industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications. It is also suitable for battery protection, high side and low side load switch.

• Silicon technology
• Very low gate charge
• Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
• Ultra-low gate impedance
• Fully characterized avalanche voltage and current
• 100% Rg tested
• Low thermal resistance
• Halogen-free
• 20V VGS Maximum gate rating

Области применения

Компьютеры и Периферия, Управление Питанием, Связь и Сеть