MOSFET силовые транзисторы IRF7665S2TRPBF

Силовой МОП-транзистор , N Канал, 100 В, 14.4 А, 0.051 Ом, DirectFET SB, Surface Mount

The IRF7665S2TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. The device utilizes DirectFET™ packaging technology. The DirectFET™ packaging technology offers lower parasitic inductance and resistance when compared to conventional wire-bonded packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. The DirectFET™ package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissip

• Low RDS (ON) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 100W per channel into 8R with no heat sink
• Dual sided cooling compatible
• Compatible with existing surface-mount technologies

Области применения

Управление Питанием, Аудио