MOSFET силовые транзисторы IRF7389TRPBF

Двойной МОП-транзистор , N и P Дополнение, 30 В, 7.3 А, 0.023 Ом, SOIC, Surface Mount

The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Complimentary half bridge
• Fully avalanche rated
• 30V P channel and -30V N channel drain to source voltage
• 7.3A P channel and -5.3A N channel continues drain current

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