MOSFET силовые транзисторы IRF6717MTR1PBF

Силовой МОП-транзистор , N Канал, 25 В, 38 А, 0.00125 Ом, DirectFET MX, Surface Mount

The IRF6717MTR1PBF is a HEXFET® single N-channel Power MOSFET ideal for CPU core DC-to-DC converters. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest ON-state resistance in a package. It is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6717MPbF balances both low resistance and low charge along with ultra-low package inductance to reduce both conduction and switching losses. It has been optimized for parameters that are critical in synchronous buck including RDS (ON), gate charge and CdV/dt-induced turn on immunity. It offers particularly low RDS (ON) and high CdV/dt immunity for synchronous FET applications.

• Dual-sided cooling compatible
• Low conduction and switching losses
• Optimized for high frequency switching and synchronize FET socket of synchronize buck converter
• 100% Rg tested
• Halogen-free

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