MOSFET силовые транзисторы IRF5305PBF

Силовой МОП-транзистор , P Канал, 55 В, 31 А, 0.06 Ом, TO-220AB, Through Hole

The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

• Drain to source voltage Vds is -55V
• Gate to source voltage is ±20V
• On resistance Rds(on) of 60mohm at Vgs of -10V
• Power dissipation Pd of 110W at 25°C
• Continuous drain current Id of -31A at Vgs -10V and 25°C
• Junction temperature range from -55°C to 175°C

Области применения

Управление Питанием, Промышленное, Переносные Устройства, Потребительская Электроника