MOSFET силовые транзисторы FDS6875

Двойной МОП-транзистор , P Канал, 20 В, 6 А, 0.024 Ом, SOIC, Surface Mount

The FDS6875 is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.

• Low gate charge
• High performance Trench technology for extremely low RDS (ON)
• High power and current handling capability
• ±8V Gate to source voltage
• -6A Continuous drain current
• -20A Pulsed drain current

Области применения

Промышленное, Управление Питанием