MOSFET силовые транзисторы FDC6321C

Двойной МОП-транзистор , N и P Дополнение, 25 В, 460 мА, 0.33 Ом, SuperSOT, Surface Mount

The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.

• Very low level gate drive requirements allowing direct operation in 3V circuits
• Gate-source Zener for ESD ruggedness

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