МОП-транзистор STB34NM60ND

Силовой МОП-транзистор , N Канал, 600 В, 29 А, 0.097 Ом, TO-263 (D2PAK), Surface Mount

The STB34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST's MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.

• The worldwide best RDS (ON) area amongst the fast recovery diode device
• 100% Avalanche tested
• Low gate input resistance
• The world's best RDS (ON) in TO-220 amongst the fast recovery diode devices
• Extremely high dV
• dt and avalanche capabilities

Области применения

Промышленное, Управление Питанием Market demand for this product has caused an extension in lead times, delivery dates may fluctuate