МОП-транзистор RFD14N05L

Силовой МОП-транзистор , N Канал, 50 В, 14 А, 0.1 Ом, TO-251AA, Through Hole

The RFD14N05L is a through hole, 50V N channel logic level power MSOFET in TO-251AA package. Transistor is produced using megaFETprocess uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance MOSFET has an special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Typical applications are switching regulators, switching converters, motor drivers and relay drivers.

• Temperature compensating PSPICE model
• Driven directly from CMOS, NMOS and TTL circuits
• Drain to source voltage (Vds) of 50V
• Gate to source voltage of ±10V
• Continuous drain current (Id) of 14A
• Power dissipation (Pd) of 48W
• Low on state resistance of 100mohm at Vgs 5V
• Operating temperature range -55°C to 175°C