МОП-транзистор IRLR2908TRPBF

Силовой МОП-транзистор , N Канал, 80 В, 30 А, 0.0225 Ом, TO-252AA, Surface Mount

The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.

• Advanced process technology
• Ultra-low ON-resistance
• Dynamic dV
• dt rating
• Repetitive avalanche allowed up to Tjmax
• Logic level

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