МОП-транзистор IRF9952PBF

Двойной МОП-транзистор , N и P Дополнение, 30 В, 3.5 А, 0.1 Ом, SOIC, Surface Mount

The IRF9952PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infra-red or wave soldering techniques.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Very low gate charge and switching losses
• Fully avalanche rated

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