МОП-транзистор IRF8304MTRPBF

Силовой МОП-транзистор , N Канал, 30 В, 28 А, 0.0017 Ом, DirectFET MX, Surface Mount

The IRF8304MTRPBF is a HEXFET® single N-channel Power MOSFET in a DirectFET® MX package rated at 28A optimized with low on resistance. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET® packaging to achieve the lowest ON-state resistance in a package. It is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. It allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8304MPbF balances both low resistance and low charge along with ultra-low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors operating at higher frequencies. It is suitable for battery protection, high side and low side load switch.

• Dual-sided cooling compatible
• Low conduction and switching losses
• Optimized for high frequency switching, both synchronize FET and some control FET application
• Compatible with existing surface-mount techniques

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