МОП-транзистор IPP65R190C7FKSA1

Силовой МОП-транзистор , N Канал, 650 В, 13 А, 0.168 Ом, TO-220, Through Hole

The IPP65R190C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

• Revolutionary best-in-class RDS (ON)
• Reduced energy stored in output capacitance (EOSS)
• Space saving through use of smaller packages or reduction of parts
• Improved safety margin and suitable for both SMPS and Solar Inverter applications
• Lowest conduction losses
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Области применения

Промышленное, Управление Питанием, Альтернативаня Энергия, Связь и Сеть