МОП-транзистор IPP045N10N3GXKSA1

Силовой МОП-транзистор , N Канал, 100 В, 100 А, 0.0039 Ом, TO-220, Through Hole

The IPP045N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.

• World's lowest RDS (ON)
• Very low Qg and Qgd
• Excellent gate charge x RDS (ON) product (FOM)
• Environmentally friendly
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products
• Halogen-free, Green device
• MSL1 rated 2

Области применения

Управление Питанием, Аудио, Привод Двигателя и Управление, Промышленное, Авто