МОП-транзистор IPP041N12N3GXKSA1

Силовой МОП-транзистор , N Канал, 120 В, 120 А, 0.0035 Ом, TO-220, Through Hole

The IPP041N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.

• Excellent gate charge x RDS (ON) product (FOM)
• Very low ON-resistance R DS(on)
• Excellent gate charge x RDS (ON) product (FOM)
• MSL1 rated 2
• Environmentally friendly
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products

• N-channel, normal level
• Qualified according to JEDEC for target applications
• Halogen-free, Green device

Области применения

Управление Питанием, Привод Двигателя и Управление, Компьютеры и Периферия, Переносные Устройства, Светодиодное Освещение