МОП-транзистор IPD530N15N3GATMA1

Силовой МОП-транзистор , N Канал, 150 В, 21 А, 0.044 Ом, TO-252 (DPAK), Surface Mount

The IPD530N15N3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.

• Optima's® -3 power transistorIdeal for high frequency switching and synchronous rectification
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance R DS(on)
• Qualified according to JEDEC for target application
• Environmentally friendly
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption

• Easy-to-design products
• Normal level
• Qualified according to JEDEC for target application

Области применения

Управление Питанием, Привод Двигателя и Управление, Аудио, Связь и Сеть, Промышленное, Авто