МОП-транзистор IPB65R190CFDATMA1

Силовой МОП-транзистор , N Канал, 700 В, 17.5 А, 0.171 Ом, TO-263 (D2PAK), Surface Mount

The IPB65R190CFD is a 650V CoolMOS™ CFD2 N-channel Power MOSFET with ultra-fast body diode. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. This CoolMOS™ CFD2 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.

• Integrated fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
• Easy to use
• drive
• Halogen-free, Green device
• Limited voltage overshoot during hard commutation
• Significant Qg reduction
• Self limiting di
• dt and dV

• dt
• Low Qoss
• Reduced turn-ON and turn-OFF delay times
• Low switching losses
• Outstanding CoolMOS™ quality

Области применения

Промышленное, Управление Питанием, Связь и Сеть, Альтернативаня Энергия, Светодиодное Освещение, Авто