МОП-транзистор IPB065N03LGATMA1

Силовой МОП-транзистор , N Канал, 30 В, 50 А, 0.0054 Ом, TO-263 (D2PAK), Surface Mount

The IPB065N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life.

• Easy to design in
• Increased battery lifetime
• Improved EMI behaviour making external snubber networks obsolete
• Saving space
• Reducing power losses
• Optimized technology for DC-to-DC converters
• Qualified according to JEDEC for target applications
• Logic level
• Excellent gate charge x RDS (ON) product (FOM)
• Very low ON-resistance RDS (ON)

• Avalanche rated
• Halogen-free, Green device

Области применения

Управление Питанием, Привод Двигателя и Управление, Светодиодное Освещение, Компьютеры и Периферия, Переносные Устройства, Потребительская Электроника Market demand for this product has caused an extension in lead times, delivery dates may fluctuate