МОП-транзистор BSC150N03LDGATMA1

Силовой МОП-транзистор , N Канал, 30 В, 20 А, 0.0125 Ом, PG-TDSON, Surface Mount

The BSC150N03LD G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.

• Easy to design in
• Increased battery lifetime
• Improved EMI behaviour making external snubber networks obsolete
• Saving space
• Reducing power losses
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC-to-DC converters
• Qualified according to JEDEC for target applications
• Excellent gate charge x RDS (ON) product (FOM)

• Very low ON-resistance RDS (ON)
• Superior thermal resistance
• 100% Avalanche tested
• Halogen-free, Green device

Области применения

Управление Питанием, Привод Двигателя и Управление, Светодиодное Освещение, Компьютеры и Периферия, Переносные Устройства, Потребительская Электроника