Микросхемы и комплектующие STPSC10H12WL

Карбидокремниевый диод Шоттки , Одиночный, 1.2 кВ, 10 А, 57 нКл, DO-247

The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages. Market demand for this product has caused an extension in lead times, delivery dates may fluctuate