Микросхемы и комплектующие N25Q512A11GSF40G.

Флеш память , NOR, Последовательная NOR, 512 Мбит, 64М x 8бит, SPI, WSOIC, 16 вывод(-ов)

The N25Q512A11GSF40G is a 512MB high-performance multiple I/O serial Flash Memory manufactured on 65nm NOR technology. It features execute-in-place functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. Innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. The stacked device contains two 256MB die. From an user standpoint this stacked device behaves as a monolithic device, except with regard to READ MEMORY and ERASE operations and status polling. The device contains a single chip select. The memory is organized as 1024 main sectors that are further divided into 16 subsectors each (16384 subsectors in total). The memory can be erased one 4kB subsector at a time, 64kB sectors at a time or single die (256MB) at a time. The device can also pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

• SPI-compatible serial bus interface
• Double transfer rate mode
• 54MHz Maximum clock frequency supported for all protocols in DTR mode
• Dual/quad I/O instruction provides increased throughput up to 54Mb/s
• Supported protocols - extended SPI, dual I/O and quad I/O
• Execute-in-place (XIP) mode for all protocols
• Configurable via volatile or nonvolatile registers
• Enables memory to work in XIP mode directly after power-on
• Configurable number of dummy cycles
• Configurable output buffer

• Software reset
• Erase capability - single die erase
• Write protection - Software write protection applicable to every 64Kb sector via volatile lock bit
• Electronic signature - JEDEC-standard 2-byte signature
• Minimum 100000 erase cycles per sector
• More than 20 years data retention

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника