Микросхемы и комплектующие M25PE80-VMN6P.

Флеш память , NOR, Последовательная NOR, 8 Мбит, 1М x 8бит, SPI, NSOIC, 8 вывод(-ов)

The M25PE80-VMN6P is a 8Mb 3V NOR serial-paged Serial Flash Memory Device accessed by a high-speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time using the page write or page program command. The page write command consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 16 sectors, divided into 16 subsectors each. Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 4096 pages or 1048576 bytes. The memory can be erased one page at a time using the page erase command, one sector at a time using the sector erase command, one subsector at a time using the subsector erase command or as a whole using the bulk erase command. The memory can be write-protected by either hardware or software using a mix of volatile and non-volatile protection features, depending on application needs.

• Deep power-down mode - 1µA (typical)
• Hardware write protection of the memory area selected using the BP0, BP1 and BP2 -bits
• More than 100000 write cycles
• More than 20 years of data retention

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