Микросхемы и комплектующие BSB028N06NN3GXUMA1

Силовой МОП-транзистор , N Канал, 60 В, 90 А, 0.0022 Ом, WDSON, Surface Mount

The BSB028N06NN3 G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). It can be used for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.

• Excellent gate charge x RDS (ON) product (FOM)
• Very low ON-resistance RDS (ON)
• Ideal for fast switching applications
• Halogen-free, Green device
• Highest system efficiency
• Less paralleling required
• Increased power density
• Very low voltage overshoot
• Superior thermal resistance
• Dual sided cooling

• Low parasitic inductance
• Normal level
• 100% Avalanche tested
• Qualified according to JEDEC for target applications
• Compatible with DirectFET® package MN foot-print and outline
• MSL1 rated

Области применения

Управление Питанием, Привод Двигателя и Управление, Промышленное, Потребительская Электроника, Переносные Устройства, Связь и Сеть, Компьютеры и Периферия