Микросхемы и комплектующие IXFK150N30P3

Силовой МОП-транзистор , N Канал, 300 В, 150 А, 0.019 Ом, TO-264AA, Through Hole

The IXFK150N30P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today's demanding high-voltage conversion system.

• Avalanche rating
• Dynamic dV/dt rating
• Low Qg
• Low static drain-to-source ON-resistance
• Low drain-to-tab capacitance
• Low package inductance
• Easy to mount
• Space saving

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Управление Питанием, Привод Двигателя и Управление